Study of gain for SiGeSn/GeSn/SiGeSn multiple quantum well lasers

被引：0

作者：

Abernathy, Grey ^{[1
,2
]}

Zhou, Yiyin ^{[1
,2
]}

Ojo, Solomon ^{[1
,2
]}

Miao, Yuanhao ^{[1
]}

Du, Wei ^{[3
]}

Sun, Greg ^{[4
]}

Soref, Richard ^{[4
]}

Liu, Jifeng ^{[5
]}

Zhang, Yong-Hang ^{[6
,7
]}

Mortazavi, Mansour ^{[8
]}

Li, Baohua ^{[9
]}

Yu, Shui-Qing ^{[1
]}

机构：

[1] Univ Arkansas, Dept Elect Engn, Fayetteville, AR 72701 USA

[2] Univ Arkansas, Microelect Photon Program, Fayetteville, AR 72701 USA

[3] Wilkes Univ, Dept Elect Engn, Wilkes Barre, PA 18766 USA

[4] Univ Massachusetts Boston, Dept Engn, Boston, MA 02125 USA

[5] Dartmouth Coll, Thayer Sch Engn, Hanover, NH 03755 USA

[6] Arizona State Univ, Ctr Photon Innovat, Tempe, AZ 85287 USA

[7] Arizona State Univ, Sch Elect Comp & Energy Engn, Tempe, AZ 85287 USA

[8] Univ Arkansas Pine Bluff, Dept Chem & Phys, Pine Bluff, AR 71601 USA

[9] Arktonics LLC, 1339 South Pinnacle Dr, Fayetteville, AR 72701 USA

来源：

2020 CONFERENCE ON LASERS AND ELECTRO-OPTICS (CLEO) | 2020年

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We studied the design of SiGeSn/GeSn/SiGeSn multiple-quantum-well active regions and the gain threshold needed to achieve lasing. The enhancement of optical confinement factor was demonstrated by introducing a SiGeSn cap. (C) 2020 The Author(s)

引用

页数：2

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