Optical characterization of InAsN single quantum wells grown by RF-MBE

被引：10
|
作者：
Kuroda, M
Katayama, R
Onabe, K
Shiraki, Y
机构：
[1] Univ Tokyo, Dept Adv Mat Sci, Kashiwa, Chiba 2778562, Japan
[2] Univ Tokyo, Dept Appl Phys, Bunkyo Ku, Tokyo 1138656, Japan
来源：
PHYSICA STATUS SOLIDI B-BASIC RESEARCH | 2004年 / 241卷 / 12期
关键词：
D O I：
10.1002/pssb.200405032
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
InAsN/GaAs single quantum wells (SQWs) were fabricated on semi insulating GaAs(001) substrates by RF-MBE. The redshift of photoluminescence peak with increasing nitrogen content was observed. It is contrary to the recent report for the bulk dilute InAsN alloy where the blueshift of absorption edge has occurred predominantly due to the Burstein-Moss effect. Considering that the Burstein-Moss shift energy of the one-dimensional quantum well is significantly lower than that of the bulk, this redshift of photoluminescence peak suggests the huge bandgap bowing of InAsN alloy as commonly found in III-V-N type alloys.
引用
收藏
页码：2791 / 2794
页数：4
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