Origin of frequency-dependent line edge roughness: Monte Carlo and fast Fourier-transform studies

被引：6
|
作者：
Saeki, Akinori [1 ,2 ]
Kozawa, Takahiro [1 ,2 ]
Tagawa, Seiichi [1 ,2 ]
机构：
[1] Osaka Univ, Inst Sci & Ind Res, Osaka 5670047, Japan
[2] Osaka Univ, CREST, Japan Sci & Technol Agcy, Osaka 5670047, Japan
来源：
APPLIED PHYSICS LETTERS | 2009年 / 95卷 / 10期
关键词：
dissolving; electron resists; fast Fourier transforms; Monte Carlo methods; ELECTRON-BEAM; SHOT-NOISE; X-RAY; RESIST; LINEWIDTH;
D O I：
10.1063/1.3225149
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The low-frequency line edge roughness (LER) of a chemically amplified resist (CAR) has a marked effect on the quality of electrical circuits, especially those produced by sub-30-nm-scale fabrication by extreme ultraviolet lithography. We examined the origin of frequency-dependent LER by Monte Carlo and dissolution simulations of a positive-tone CAR subjected to electron beam lithography. The correlation between frequency components and LER is highlighted to clarify which component is dominant. We found that the resist process parameters, such as the exposure dose, the base quencher, and the development, cause low-frequency LER even in the absence of mesoscale resist roughness.
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页数：3
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