共 50 条
- [32] Nanoscale observations on the degradation phenomena. of phase-change nonvolatile memory devices using Ge2Sb2Te5 JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 2007, 46 (4-7): : L99 - L102
- [34] Critical quenching speed determining phase of Ge2Sb2Te5 in phase-change memory 2006 INTERNATIONAL ELECTRON DEVICES MEETING, VOLS 1 AND 2, 2006, : 527 - +
- [36] Minimal phase-change marks produced in amorphous Ge2Sb2Te5 films JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 2004, 43 (6B): : L818 - L821
- [40] Compatibility study of Ti and Ge2Sb2Te5 for phase-change memory applications RADIATION EFFECTS AND DEFECTS IN SOLIDS, 2012, 167 (07): : 487 - 495