Compact, ultra-tunable InGaSb/AlGaAsSb Si external cavity laser at the Mid-Infrared (MIR)

被引:0
|
作者
Sia, Jia Xu Brian [1 ]
Wang, Wanjun [1 ]
Qiao, Zhongliang [1 ]
Li, Xiang [1 ]
Guo, Xin [1 ]
Zhou, Jin [1 ]
Zhang, Zecen [1 ]
Littlejohns, Callum [1 ,2 ]
Liu, Chongyang [1 ]
Reed, Graham T. [1 ,2 ]
Wang, Hong [1 ]
机构
[1] Nanyang Technol Univ, Sch Elect & Elect Engn, Silicon Ctr Excellence, Novitas, Singapore 639798, Singapore
[2] Univ Southampton, Optoelect Res Ctr, Southampton SO17 1BJ, Hants, England
基金
新加坡国家研究基金会;
关键词
SILICON;
D O I
暂无
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
We present the first MIR hybrid Si external cavity laser with a tunable range below the 2 mu m mark. To the best of our knowledge, we have achieved the largest tunable range of 66 nm (1881-1947 nm) near the 2 mu m waveband in silicon photonics. (C) 2019 The Author(s)
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页数:2
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