EUV laser produced plasma source development

被引：3
|
作者：
Farrar, Nigel R. [1 ]
Brandt, David C. [1 ]
Fomenkov, Igor V. [1 ]
Ershov, Alex I. [1 ]
Bowering, Norbert R. [1 ]
Partlo, William N. [1 ]
Myers, David W. [1 ]
Bykanov, Alexander N. [1 ]
Vaschenko, Georgiy O. [1 ]
Khodykin, Oleh V. [1 ]
Hoffman, Jerzy R. [1 ]
Chrobak, Christopher P. [1 ]
机构：
[1] Cymer Inc, San Diego, CA 92127 USA
来源：
MICROELECTRONIC ENGINEERING | 2009年 / 86卷 / 4-6期
关键词：
D O I：
10.1016/j.mee.2008.10.020
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
This paper describes the development of a LPP EUV source using a CO(2) laser with tin droplet targets. Burst power of 100 W and average power of 25 W has been achieved. Collector mirrors have been fabricated with >50% reflectivity and show stable EUV images. Multiple debris mitigation techniques preserve mirror reflectivity. Manufacturing of the first production systems is in progress. (C) 2008 Elsevier B.V. All rights reserved.
引用
收藏
页码：509 / 512
页数：4
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