Solar cells based on gallium antimonide

被引：30
|
作者：
Andreev, V. M. [1 ]
Sorokina, S. V. [1 ]
Timoshina, N. Kh. [1 ]
Khvostikov, V. P. [1 ]
Shvarts, M. Z. [1 ]
机构：
[1] Russian Acad Sci, AF Ioffe Physicotech Inst, St Petersburg 194021, Russia
来源：
SEMICONDUCTORS | 2009年 / 43卷 / 05期
关键词：
73.50.Pz; 81.15.Lm; 84.60.Jt;
D O I：
10.1134/S1063782609050236
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
Liquid-phase epitaxy and diffusion from the gas phase have been used to create various kinds of GaSb-based solar cell structures intended for use in cascaded solar-radiation converters. A narrow-gap (GaSb) solar cell was studied in tandem based on a combination of semiconductors GaAs-GaSb (two p-n junctions) and GaInP/GaAs-GaSb (three p-n junctions). The maximum efficiency of photovoltaic conversion in GaSb behind the wide-gap cells is eta = 6.5% (at sunlight concentration ratio of 275X, AM1.5D Low AOD spectrum).
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页码：668 / 671
页数：4
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