Temperature insensitivity of the Al-free InGaAs(P)/GaAs lasers for lambda=808 and 980 nm

被引：11
|
作者：
Razeghi, M
Yi, H
Diaz, J
Kim, S
Erdtmann, M
机构：
来源：
IN-PLANE SEMICONDUCTOR LASERS: FROM ULTRAVIOLET TO MIDINFRARED | 1997年 / 3001卷
关键词：
D O I：
10.1117/12.273792
中图分类号：
O43 [光学];
学科分类号：
070207 ; 0803 ;
摘要：
In this work, we present our recent achievements for the reliabitity of the Al-free lasers at high temperatures and high powers. Laser operations up to 30,000 hours were achieved without any degradation in the lasers characteristics from 7 randomly selected InGaAsP/GaAs diodes for lambda = 808 nn. The test were performed for lasers without mirror-coating for optical power of 0.5 to 1 W CW at 50-60 degrees C. To the best of our knowledge, this is the first direct demonstration of the extremely high reliability of Al-free diodes operations at high powers and temperatures for periods of time much longer than practical need (similar to 3 years). The characteristics during the tests are discussed in detail.
引用
收藏
页码：243 / 253
页数：11
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