Temperature insensitivity of the Al-free InGaAs(P)/GaAs lasers for lambda=808 and 980 nm

In this work, we present our recent achievements for the reliabitity of the Al-free lasers at high temperatures and high powers. Laser operations up to 30,000 hours were achieved without any degradation in the lasers characteristics from 7 randomly selected InGaAsP/GaAs diodes for lambda = 808 nn. The test were performed for lasers without mirror-coating for optical power of 0.5 to 1 W CW at 50-60 degrees C. To the best of our knowledge, this is the first direct demonstration of the extremely high reliability of Al-free diodes operations at high powers and temperatures for periods of time much longer than practical need (similar to 3 years). The characteristics during the tests are discussed in detail.