Characterization of thick epitaxial GaAs layers for X-ray detection

被引：18

作者：

Samic, H

Sun, GC

Donchev, V

Nghia, NX

Gandouzi, M

Zazoui, M

Bourgoin, JC

El-Abbassi, H

Rath, S

Sellin, PJ

机构：

[1] Univ Paris 06, Lab Milieux Desordonnes & Heterogenes, CNRS UMR 7603, F-75252 Paris 05, France

[2] Univ Sarajevo, Dept Phys, Saobracajni Fak, Sarajevo 71000, Bosnia & Herceg

[3] Univ Sofia, Dept Condensed Matter Phys, Sofia 1164, Bulgaria

[4] Inst Sci Mat, Hanoi, Vietnam

[5] Univ Gabes, Fac Sci, Gabes 6029, Tunisia

[6] Fac Sci & Tech Mohammedia, Lab Phys Mat Condensee, Mohammadia, Morocco

[7] Univ Surrey, Dept Phys, Guildford GU2 7XH, Surrey, England

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT | 2002年 / 487卷 / 1-2期

关键词：

GaAs; epitxial layer; pin structure; X-ray detector;

D O I：

10.1016/S0168-9002(02)00953-1

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

We have studied the current-voltage and capacitance-voltage characteristics of p/i/n structures made on non-intentionally doped epitaxial GaAs layers grown by the chemical reaction method. Deep level transient spectroscopy demonstrates that these layers contain a low defect concentration. X-ray photoconductivity shows that the diffusion length is large. The homogeneity of the properties of these layers, which has been evaluated over large area (cm(2)), is confirmed by photoluminescence mapping. (C) 2002 Elsevier Science B.V. All rights reserved.

引用

页码：107 / 112

页数：6

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