In Situ Observation of Oxidation of Liquid Droplets of Tin and Melting Behavior of a Tin Particle Covered With a Tin Oxide Layer

被引:3
|
作者
Mima, Takayuki [2 ]
Takeuchi, Hironori [2 ]
Arai, Shigeo [1 ]
Kishita, Keisuke [3 ]
Kuroda, Kotaro [2 ]
Saka, Hiroyasu [1 ]
机构
[1] Nagoya Univ, Ecotopia Sci Inst, 1MV Electron Microscopy Lab, Nagoya, Aichi 4648603, Japan
[2] Nagoya Univ, Grad Sch Engn, Nagoya, Aichi 4648603, Japan
[3] Toyota Motor Co Ltd, Mat Anal Dept, Toyota 4718542, Japan
关键词
liquid metal; solid-liquid interface; oxidation; TRANSMISSION ELECTRON-MICROSCOPY; GROWTH-PROCESS; INSITU OBSERVATION; INTERFACE; CRYSTAL; BI;
D O I
10.1002/jemt.20675
中图分类号
R602 [外科病理学、解剖学]; R32 [人体形态学];
学科分类号
100101 ;
摘要
Oxidation of a liquid droplet of tin (Sn) was observed using an in situ specimen heating holder in an oxygen environment. The surface of the Sn liquid droplet was covered with a tin oxide layer, Sn3O4, the thickness of which depended on the oxygen pressure and temperature. Subsequent cooling of the droplet resulted in the formation of a solid Sn particle covered with a Sn3O4 layer. The solid Sn particle was then heated above the melting temperature of Sn, and the melting behavior of Sn was observed. Microsc. Res. Tech. 72:223-231, 2009. (C) 2009 Wiley-Liss, Inc.
引用
收藏
页码:223 / 231
页数:9
相关论文
共 50 条
  • [31] Properties of tin oxide films grown by atomic layer deposition from tin tetraiodide and ozone
    Kalam, Kristjan
    Ritslaid, Peeter
    Kaeaembre, Tanel
    Tamm, Aile
    Kukli, Kaupo
    BEILSTEIN JOURNAL OF NANOTECHNOLOGY, 2023, 14 : 1085 - 1092
  • [32] Liquid phase deposition film of tin oxide
    Tsukuma, K
    Akiyama, T
    Imai, H
    JOURNAL OF NON-CRYSTALLINE SOLIDS, 1997, 210 (01) : 48 - 54
  • [33] Performance improvement of tin-doped zinc oxide thin-film transistor by novel channel modulation layer of indium tin oxide/tin zinc oxide
    Chen, Zhuofa
    Han, Dedong
    Zhao, Nannan
    Wu, Jing
    Cong, Yingying
    Dong, Junchen
    Zhao, Feilong
    Zhang, Shengdong
    Zhang, Xing
    Wang, Yi
    Liu, Lifeng
    JAPANESE JOURNAL OF APPLIED PHYSICS, 2015, 54 (04)
  • [34] Properties of tin oxide films grown by atomic layer deposition from tin tetraiodide and ozone
    Kalam K.
    Ritslaid P.
    Käämbre T.
    Tamm A.
    Kukli K.
    Beilstein Journal of Nanotechnology, 2023, 14 : 1085 - 1092
  • [35] Atomic layer deposition (ALD) of tin(IV) oxide films using tetraethyl tin and ozone
    Gladfelter, Wayne L.
    Warner, Ellis J.
    Cramer, Christopher J.
    ABSTRACTS OF PAPERS OF THE AMERICAN CHEMICAL SOCIETY, 2012, 244
  • [36] The Fabrication of Tin Oxide Films by Atomic Layer Deposition using Tetrakis(Ethylmethylamino) Tin Precursor
    Choi, Woon-Seop
    TRANSACTIONS ON ELECTRICAL AND ELECTRONIC MATERIALS, 2009, 10 (06) : 200 - 202
  • [37] Effects of the microstructure of platinum electrode on the oxidation behavior of TiN diffusion barrier layer
    Lee, DS
    Woo, HJ
    Park, DY
    Ha, J
    Hwang, CS
    Yoon, E
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2003, 42 (2A): : 630 - 633
  • [38] OXIDATION OF TITANIUM NITRIDE IN OXYGEN - BEHAVIOR OF TIN0.83 AND TIN0.79 PLATES
    DESMAISON, J
    LEFORT, P
    BILLY, M
    OXIDATION OF METALS, 1979, 13 (03): : 203 - 222
  • [40] Enhanced carrier densities in indium tin oxide films covered with nanoparticles of fluorine-doped tin oxide for transparent conducting electrodes
    Fukano, T
    Motohiro, T
    Hashizume, H
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2005, 44 (12): : 8747 - 8752