Nonvolatile Bipolar Resistive Memory Switching in Single Crystalline NiO Heterostructured Nanowires

被引：132

作者：

Oka, Keisuke

Yanagida, Takeshi ^{[1
]}

Nagashima, Kazuki

Tanaka, Hidekazu

Kawai, Tomoji

机构：

[1] Osaka Univ, Inst Sci & Ind Res, Osaka 5670047, Japan

来源：

JOURNAL OF THE AMERICAN CHEMICAL SOCIETY | 2009年 / 131卷 / 10期

关键词：

HIGH-DENSITY; RESISTANCE; CARBON; FILMS;

D O I：

10.1021/ja8089922

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

We have demonstrated the nonvolatile bipolar resistive memory switching in single crystalline NiO heterostructured nanowires for the first time. The self-assembled NiO nanowires are expected to open up opportunities to explore not only the detailed nanoscate mechanisms in NiO resistive memory switching but also next-generation nanoscate nonvolatile memory devices with the potential for high-density device integration and improved memory characteristics.

引用

页码：3434 / +

页数：3

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