Long-wavelength edge-emitting lasers on gallium arsenide using InAs quantum dots embedded in InGaAs

被引：0
|
作者：
Fiore, A [1 ]
Oesterle, U [1 ]
Houdré, R [1 ]
Vez, D [1 ]
Stanley, RP [1 ]
Ilegems, M [1 ]
机构：
[1] Ecole Polytech Fed Lausanne, Inst Micro Optoelect, CH-1015 Lausanne, Switzerland
来源：
COMPOUND SEMICONDUCTORS 1999 | 2000年 / 166期
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D O I：
暂无
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
We demonstrate edge-emitting lasers based on self-assembled InAs quantum dots (QDs) on GaAs substrates. The InAs QDs are embedded in an InGaAs quantum well (QW) to red-shift the lasing transition. The lasers emit at lambda=1.2 mum with threshold current densities approximate to100 A/cm(2). Maximum modal gains on the order of 5 cm(-1) are deduced for a single QD sheet.
引用
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页码：273 / 276
页数：4
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