Long-wavelength edge-emitting lasers on gallium arsenide using InAs quantum dots embedded in InGaAs

被引：0

作者：

Fiore, A ^{[1
]}

Oesterle, U ^{[1
]}

Houdré, R ^{[1
]}

Vez, D ^{[1
]}

Stanley, RP ^{[1
]}

Ilegems, M ^{[1
]}

机构：

[1] Ecole Polytech Fed Lausanne, Inst Micro Optoelect, CH-1015 Lausanne, Switzerland

来源：

COMPOUND SEMICONDUCTORS 1999 | 2000年 / 166期

关键词：

D O I：

暂无

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

We demonstrate edge-emitting lasers based on self-assembled InAs quantum dots (QDs) on GaAs substrates. The InAs QDs are embedded in an InGaAs quantum well (QW) to red-shift the lasing transition. The lasers emit at lambda=1.2 mum with threshold current densities approximate to100 A/cm(2). Maximum modal gains on the order of 5 cm(-1) are deduced for a single QD sheet.

引用

页码：273 / 276

页数：4

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