GaN avalanche photodiodes

被引：174
|
作者：
Carrano, JC [1 ]
Lambert, DJH
Eiting, CJ
Collins, CJ
Li, T
Wang, S
Yang, B
Beck, AL
Dupuis, RD
Campbell, JC
机构：
[1] US Mil Acad, Dept Elect Engn & Comp Sci, Photon Res Ctr, W Point, NY 10996 USA
[2] Univ Texas, Dept Elect & Comp Engn, Ctr Microelect Res, Austin, TX 78712 USA
来源：
APPLIED PHYSICS LETTERS | 2000年 / 76卷 / 07期
关键词：
D O I：
10.1063/1.125631
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We report the electrical and optical characteristics of avalanche photodiodes fabricated in GaN grown by metalorganic chemical vapor deposition. The current-voltage characteristics indicate a multiplication of > 25. Experiment indicates and simulation verifies that the magnitude of the electric field at the onset of avalanche gain is greater than or equal to 3 MV/cm. Small-area devices exhibit stable gain with no evidence of microplasmas. (C) 2000 American Institute of Physics. [S0003-6951(00)01207-9].
引用
收藏
页码：924 / 926
页数：3
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