Modeling atomic hydrogen diffusion in GaAs

被引：0

作者：

Kagadei, V ^{[1
]}

Nefyodtsev, E ^{[1
]}

机构：

[1] Res Inst Semicond Devices, Tomsk 634034, Russia

来源：

MICRO- AND NANOELECTRONICS 2003 | 2004年 / 5401卷

关键词：

modeling; atomic hydrogen; diffusion; GaAs; diffusion barrier; passivating of centers;

D O I：

10.1117/12.562666

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The hydrogen diffusion model in GaAs in conditions of an intense flow of penetrating atoms has been developed. It is shown that the formation undersurface diffusion barrier layer from immobile interstitial molecules of hydrogen reduce probability of atoms penetration into crystal and rate of their diffusion in GaAs, and influence on the process of shallow-and/or deep-centers passivation. It is exhibited that the influence of diffusion barrier should be taken into account at optimum mode selection of GaAs structure hydrogenation.

引用

页码：677 / 682

页数：6

共 50 条

[41] Modeling and calculations of the physicochemical parameters of diffusion of atomic hydrogen on the surface of differently sized nanotubes with different chiralities
A. A. Kuzubov
R. P. Avramov
M. A. Raimova
M. N. Popov
Yu. M. Milyutina
T. A. Kozhevnikova
P. V. Artyushenko
Russian Journal of Physical Chemistry A, 2009, 83 : 649 - 653
[42] Modeling and Calculations of the Physicochemical Parameters of Diffusion of Atomic Hydrogen on the Surface of Differently Sized Nanotubes with Different Chiralities
Kuzubov, A. A.
Avramov, R. P.
Raimova, M. A.
Popov, M. N.
Milyutina, Yu. M.
Kozhevnikova, T. A.
Artyushenko, P. V.
RUSSIAN JOURNAL OF PHYSICAL CHEMISTRY A, 2009, 83 (04) : 649 - 653
[43] Modeling of hydrogen diffusion in silicon crystals
Saad, Anis
Velichko, O. I.
Shaman, Yu. P.
Mazanik, A. V.
Fedotov, A. K.
Fedotova, V. V.
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 2006, 253 (1-2): : 118 - 121
[44] Modeling the atomic diffusion coefficient of channeled particles
Shtanov Y.N.
Koshcheev V.P.
Morgun D.A.
Panina T.A.
Mathematical Models and Computer Simulations, 2017, 9 (2) : 201 - 205
[45] Effect of atomic hydrogen on GaAs growth on GaAs(311)A substrate in molecular beam epitaxy
Institute of Applied Physics, University of Tsukuba, 1-1-1, Tennodai, Tsukuba, Ibaraki 305-8573, Japan
Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 2000, 39 (7 B): : 4266 - 4269
[46] Atomic structure of defect complexes containing carbon and hydrogen in GaAs
Lee, SG
Chang, KJ
PHYSICAL REVIEW B, 1996, 54 (12) : 8522 - 8526
[47] Atomic hydrogen-assisted GaAs molecular beam epitaxy
Okada, Yoshitaka, 1600, JJAP, Minato-ku, Japan (34):
[48] DONOR NEUTRALIZATION IN n TYPE GaAs BY ATOMIC HYDROGEN.
Chevallier, J.
Dautremont-Smith, W.C.
Pearton, S.J.
Tu, C.W.
Jalil, A.
Vide, les Couches Minces, 1985, (229):
[49] INTERACTION OF ATOMIC-HYDROGEN WITH NATIVE OXIDES ON GAAS(100)
PETIT, EJ
HOUZAY, F
MOISON, JM
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1992, 10 (04): : 2172 - 2177
[50] EPITAXIAL GAAS GROWTH USING ATOMIC-HYDROGEN AS THE REACTANT
SILVAANDRADE, F
CHAVEZ, F
GOMEZ, E
JOURNAL OF APPLIED PHYSICS, 1994, 76 (03) : 1946 - 1947

← 1 2 3 4 5 →