Thermoelectric properties of Si-Ge multiple quantum wells

被引：1

作者：

Yamamoto, A ^{[1
]}

Ohta, T

Miki, K

Sakamoto, K

Kato, H

Matsui, T

机构：

[1] Electrotech Lab, Tsukuba, Ibaraki 3058568, Japan

[2] Nagoya Univ, Nagoya, Aichi 4648601, Japan

来源：

JOURNAL OF THE JAPAN INSTITUTE OF METALS | 1999年 / 63卷 / 11期

关键词：

conductivity; Seebeck coefficient; power factor; quantum well; density of state; subband;

D O I：

10.2320/jinstmet1952.63.11_1386

中图分类号：

TF [冶金工业];

学科分类号：

0806 ;

摘要：

We produced Si0.8Ge0.2 multiple quantum wells using MBE and evaluated the in-plane electrical properties, Si0.8Ge0.2 quantum wells with various well widths separated by 20 nm Si barrier layers and other samples with the same well/barrier ratio were grown on high resistive Si(100) substrates with a 20 nm buffer layer. Both well and barrier layers were uniformly boron-doped. The electrical conductivity sigma and Seebeck coefficient S were measured at room temperature and showed a size effect in power factor sigma S-2, depending on the quantum well period.

引用

页码：1386 / 1392

页数：7

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