SPICE model for the single electron tunnel junction

被引：3
|
作者：
van de Haar, R [1 ]
Klunder, RH [1 ]
Hoekstra, J [1 ]
机构：
[1] Delft Univ Technol, Fac Informat Technol & Syst, Dept Elect Engn, NL-2600 GA Delft, Netherlands
来源：
ICECS 2001: 8TH IEEE INTERNATIONAL CONFERENCE ON ELECTRONICS, CIRCUITS AND SYSTEMS, VOLS I-III, CONFERENCE PROCEEDINGS | 2001年
关键词：
D O I：
10.1109/ICECS.2001.957487
中图分类号：
TP18 [人工智能理论];
学科分类号：
081104 ; 0812 ; 0835 ; 1405 ;
摘要：
In this paper a SPICE model for a single electron tunnel junction is given. The model is derived from a new formulation of the tunnel condition based on voltages over the tunnel junctions. To validate the model an electron box is simulated.
引用
收藏
页码：1445 / 1448
页数：4
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