Energy levels in three-dimensional quantum-confinement structures

被引：32
|
作者：
Gangopadhyay, S
Nag, BR
机构：
[1] Inst. of Radio Phys. and Electronics, Calcutta 700009
来源：
NANOTECHNOLOGY | 1997年 / 8卷 / 01期
关键词：
D O I：
10.1088/0957-4484/8/1/004
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
Energy levels are calculated for three-dimensional (3D) quantum-confinement structures with finite potential barriers. GaAs/Ga0.63Al0.37As, Ga0.47In0.53As/InP and Ga0.47In0.53As/Al0.48In0.52As systems are considered. Analytic results are presented for spherical structures including the effects of nonparabolicity. A numerical method is also presented for the calculation of the energy levels in a 3D quantum-confinement structure in the shape of a cube or a parallelopiped. The method is applied for calculating the energy shift in a cylindrical dot of the GaAs/Ga0.63Al0.37As system.
引用
收藏
页码：14 / 17
页数：4
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