Formation and atomic structure of ordered Sr-induced nanostrips on Ge(100)

被引:6
|
作者
Lukanov, Boris R. [1 ,2 ]
Garrity, Kevin F. [1 ,3 ,4 ]
Ismail-Beigi, Sohrab [1 ,3 ]
Altman, Eric I. [1 ,5 ]
机构
[1] Yale Univ, Ctr Res Interface Structures & Phenomena, New Haven, CT 06520 USA
[2] Yale Univ, Dept Mech Engn & Mat Sci, New Haven, CT 06520 USA
[3] Yale Univ, Dept Appl Phys, New Haven, CT 06520 USA
[4] Rutgers State Univ, Dept Phys & Astron, Piscataway, NJ 08854 USA
[5] Yale Univ, Dept Chem & Environm Engn, New Haven, CT 06520 USA
基金
美国国家科学基金会;
关键词
SCANNING-TUNNELING-MICROSCOPY; DENSITY-FUNCTIONAL THEORY; CRYSTALLINE OXIDES; INTERFACE; GROWTH; GE(001); SILICON;
D O I
10.1103/PhysRevB.89.155319
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The deposition of alkaline earths onto Ge(100) surfaces leads to well-ordered arrays of narrow trenches and elongated plateaus that extend for thousands of angstroms. Using scanning tunneling microscopy (STM) in conjunction with density functional theory (DFT), the atomic scale details of these nanostructures are revealed and the driving force responsible for their formation is evaluated. The STM data reveal a dramatic contrast reversal when the polarity of the imaging bias is switched. An energetically favorable structure for the plateaus was found using DFT that can reproduce all of the observed features. This structure is based upon a double dimer vacancy model in which Sr atoms displace two Ge dimers from the surface. Interestingly, the ordered plateau-trench structure is unique to Ge(100) despite the structural and chemical similarities to the Si(100) surface.
引用
收藏
页数:8
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