Structural evolution of GaN nucleation layers during metal-organic chemical vapour deposition growth

被引：0
|
作者：
Degave, F
Ruterana, P
Nouet, G
Je, JH
Kim, CC
机构：
[1] Inst Sci Mat & Rayonnement, CRISMAT, ESCTM, F-14050 Caen, France
[2] Pohang Univ Sci & Engn, Dept Mat Sci & Engn, Pohang, South Korea
来源：
MICROSCOPY OF SEMICONDUCTING MATERIALS 2001 | 2001年 / 169期
关键词：
D O I：
暂无
中图分类号：
TH742 [显微镜];
学科分类号：
摘要：
Low temperature nucleation of GaN on (0001) sapphire is investigated. Depositions were made for 20 s, 40 s, 60 s, 120 s and 180 s at 500degreesC by MOCVD. It is shown that the shortest deposition times give rise to the formation of small cubic crystallites. Subsequently, the density of nucleation islands increases, they grow in height and their shape is modified. They start to transform to wurtzite from the interface with the substrate. These results will be discussed in terms of the operating nucleation and growth mechanisms.
引用
收藏
页码：281 / 284
页数：4
相关论文
共 50 条
  • [41] Corrosion of ferritic stainless steel during metal-organic chemical vapour deposition growth using a fluorinated precursor
    McAleese, J
    Steele, BCH
    CORROSION SCIENCE, 1998, 40 (01) : 113 - 123
  • [42] Growth of low resistivity p-type GaN by metal organic chemical vapour deposition
    Eiting, CJ
    Grudowski, PA
    Dupuis, RD
    ELECTRONICS LETTERS, 1997, 33 (23) : 1987 - 1989
  • [43] Highly aligned, template-free growth and characterization of vertical GaN nanowires on sapphire by metal-organic chemical vapour deposition
    Wang, George T.
    Talin, A. Alec
    Werder, Donald J.
    Creighton, J. Randall
    Lai, Elaine
    Anderson, Richard J.
    Arslan, Ilke
    NANOTECHNOLOGY, 2006, 17 (23) : 5773 - 5780
  • [44] The influence of indium surfactant on the electrical properties of GaN epilayers grown by metal-organic chemical vapour deposition
    Song, J.
    Xu, F. J.
    Miao, Z. L.
    Huang, S.
    Wang, Y.
    Wang, X. Q.
    Shen, B.
    Qin, X. B.
    Wang, B. Y.
    Shen, X. Q.
    Okumura, H.
    JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2010, 43 (14)
  • [45] Reactor design rules for GaN epitaxial layer growths on sapphire in metal-organic chemical vapour deposition
    Kim, K
    Noh, SK
    SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2000, 15 (08) : 868 - 874
  • [46] Epitaxial growth of (0001) oriented porous GaN layers by chemical vapour deposition
    Bilousov, Oleksandr V.
    Carvajal, Joan J.
    Mena, Josue
    Martinez, Oscar
    Jimenez, Juan
    Geaney, Hugh
    Diaz, Francesc
    Aguilo, Magdalena
    O'Dwyer, Colm
    CRYSTENGCOMM, 2014, 16 (44): : 10255 - 10261
  • [47] Optical and Structural Properties of Mn-Doped GaN Grown by Metal Organic Chemical Vapour Deposition
    Cui Xu-Gao
    Zhang Rong
    Tao Zhi-Kuo
    Li Xin
    Xiu Xiang-Qian
    Xie Zi-Li
    Zheng You-Dou
    CHINESE PHYSICS LETTERS, 2009, 26 (03)
  • [48] Lateral growth on GaSb(111)B and GaSb(001) by metal-organic chemical vapour deposition
    Bonnot, R.
    Coudray, P.
    Giani, A.
    Gouskov, A.
    Bougnot, G.
    Materials science & engineering. B, Solid-state materials for advanced technology, 1991, B9 (1-3): : 101 - 104
  • [49] Controlled synthesis of nonpolar GaInN/GaN multiple-quantum-shells on GaN nanowires by metal-organic chemical vapour deposition
    Lu, Weifang
    Goto, Nanami
    Murakami, Hedeki
    Sone, Naoki
    Iida, Kazuyoshi
    Terazawa, Mizuki
    Han, Dong-Pyo
    Iwaya, Motoaki
    Tekeuchi, Tetsuya
    Kamiyama, Satoshi
    Akasaki, Isamu
    APPLIED SURFACE SCIENCE, 2020, 509
  • [50] Growth of AlN nanowires by metal organic chemical vapour deposition
    Cimalla, V
    Foerster, C
    Cengher, D
    Tonisch, K
    Ambacher, O
    PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 2006, 243 (07): : 1476 - 1480
12345