Structural evolution of GaN nucleation layers during metal-organic chemical vapour deposition growth

被引：0
|
作者：
Degave, F
Ruterana, P
Nouet, G
Je, JH
Kim, CC
机构：
[1] Inst Sci Mat & Rayonnement, CRISMAT, ESCTM, F-14050 Caen, France
[2] Pohang Univ Sci & Engn, Dept Mat Sci & Engn, Pohang, South Korea
来源：
MICROSCOPY OF SEMICONDUCTING MATERIALS 2001 | 2001年 / 169期
关键词：
D O I：
暂无
中图分类号：
TH742 [显微镜];
学科分类号：
摘要：
Low temperature nucleation of GaN on (0001) sapphire is investigated. Depositions were made for 20 s, 40 s, 60 s, 120 s and 180 s at 500degreesC by MOCVD. It is shown that the shortest deposition times give rise to the formation of small cubic crystallites. Subsequently, the density of nucleation islands increases, they grow in height and their shape is modified. They start to transform to wurtzite from the interface with the substrate. These results will be discussed in terms of the operating nucleation and growth mechanisms.
引用
收藏
页码：281 / 284
页数：4
相关论文
共 50 条
  • [1] Nucleation layer evolution in metal-organic chemical vapor deposition grown GaN
    Wu, XH
    Kapolnek, D
    Tarsa, EJ
    Heying, B
    Keller, S
    Keller, BP
    Mishra, UK
    DenBaars, SP
    Speck, JS
    APPLIED PHYSICS LETTERS, 1996, 68 (10) : 1371 - 1373
  • [2] Nucleation and growth study of copper thin films on different substrates and wetting layers by metal-organic chemical vapour deposition
    Dutta, A
    Goswami, J
    Shivashankar, SA
    BULLETIN OF MATERIALS SCIENCE, 1995, 18 (07) : 901 - 910
  • [3] The effect of growth temperature on structural quality of GaN/AlN quantum wells by metal-organic chemical vapour deposition
    Ma, Z. F.
    Zhao, D. G.
    Wang, Y. T.
    Jiang, D. S.
    Zhang, S. M.
    Zhu, J. J.
    Liu, Z. S.
    Sun, B. J.
    Yang, Hui
    Liang, J. W.
    JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2008, 41 (10)
  • [4] Study of defects evolution in GaN layers grown by metal-organic chemical vapor deposition
    Jang, J. H.
    Herrero, A. M.
    Gila, B.
    Abernathy, C.
    Craciun, V.
    JOURNAL OF APPLIED PHYSICS, 2008, 103 (06)
  • [5] Study of defects evolution in GaN layers grown by metal-organic chemical vapor deposition
    Jang, J.H.
    Herrero, A.M.
    Gila, B.
    Abernathy, C.
    Craciun, V.
    Journal of Applied Physics, 2008, 103 (06):
  • [6] Metal-organic chemical vapor deposition growth of GaN
    Lu, Da-cheng
    Wang, Du
    Wang, Xiaohui
    Liu, Xianglin
    Dong, Jianrong
    Gao, Weibin
    Li, Chengji
    Li, Yunyan
    1600, Elsevier Science S.A., Lausanne, Switzerland (B29): : 1 - 3
  • [7] Dislocation reduction through nucleation and growth selectivity of metal-organic chemical vapor deposition GaN
    Zhang, Wei
    Liu, Peichi
    Jackson, Biyun
    Sun, Tianshu
    Huang, Shyh-Jer
    Hsu, Hsiao-Chiu
    Su, Yan-Kuin
    Chang, Shoou-Jinn
    Li, Lei
    Li, Ding
    Wang, Lei
    Hu, XiaoDong
    Xie, Y. H.
    JOURNAL OF APPLIED PHYSICS, 2013, 113 (14)
  • [8] Dislocation reduction through nucleation and growth selectivity of metal-organic chemical vapor deposition GaN
    Xie, Y.H. (yahong.xie@gmail.com), 1600, American Institute of Physics Inc. (113):
  • [9] Observation of growth modes during metal-organic chemical vapor deposition of GaN
    Stephenson, GB
    Eastman, JA
    Thompson, C
    Auciello, O
    Thompson, LJ
    Munkholm, A
    Fini, P
    DenBaars, SP
    Speck, JS
    APPLIED PHYSICS LETTERS, 1999, 74 (22) : 3326 - 3328
  • [10] Observation of growth modes during metal-organic chemical vapor deposition of GaN
    Materials Science Division, Argonne National Laboratory, Argonne, IL 60439, United States
    不详
    不详
    不详
    Appl Phys Lett, 22 (3326-3328):
12345