Scanning tunneling spectroscopy investigation of the (√3 x √3)R30° Sn/Si(111) α and γ surfaces

被引：7

作者：

Ressel, B

Di Teodoro, C

Profeta, G

Ottaviano, L

Cháb, V

Prince, KC

机构：

[1] Sincrotrone Trieste, Expt Div, I-34012 Basovizza Trieste, Italy

[2] TASC Lab, I-34012 Basovizza Trieste, Italy

[3] Univ Aquila, Dipartimento Fis, I-67010 Coppito, Italy

[4] Unita INFM, I-67010 Coppito, Italy

[5] Acad Sci Czech Republ, Inst Phys, Prague 16253 6, Czech Republic

来源：

SURFACE SCIENCE | 2004年 / 562卷 / 1-3期

关键词：

tin; silicon; scanning tunneling spectroscopies; surface electronic phenomena (work function; surface potential; surface states etc.);

D O I：

10.1016/j.susc.2004.05.121

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Scanning tunneling spectroscopy (STS) has been used to investigate the electronic structure of the 1/3 ML Sn1-xSix/ Si(1 1 1) 2D alloy at 300 K for the two limiting cases of x approximate to 0 and x = 0.5 corresponding to the alpha and gamma (or mosaic) phases of the Sn induced (root3 x root3)R30degrees structure. Spectra of the alpha-surface compare well with k(\\) resolved photoemission and inverse photoemission spectra reported in the literature, but less well, in the empty state region, with theoretical band structure calculations. The surface is metallic (or semiconducting with a small gap of order 100 meV) and there are two main structures above and below the Fermi level. STS of the gamma phase also shows metallic (or similar semiconducting) behaviour of the surface, in contrast to the related semiconducting gamma-Pb/Si(1 1 1) and gamma-Pb/Ge(1 1 1) phases. (C) 2004 Elsevier B.V. All rights reserved.

引用

页码：128 / 136

页数：9

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