Influence of stress on the optical properties of double InGaN/GaN multiple quantum wells

被引：3

作者：

Peng, Ruoshi ^{[1
]}

Xu, Shengrui ^{[1
]}

Zhang, Jinfeng ^{[1
]}

Zhang, Jincheng ^{[1
]}

Du, Jinjuan ^{[1
]}

Zhao, Ying ^{[1
]}

Fan, Xiaomeng ^{[1
]}

Hao, Yue ^{[1
]}

机构：

[1] Xidian Univ, Sch Microelect, Wide Bandgap Semicond Technol Disciplines State K, Xian 710071, Shaanxi, Peoples R China

来源：

OPTICAL MATERIALS EXPRESS | 2018年 / 8卷 / 06期

基金：

国家重点研发计划; 中国国家自然科学基金;

关键词：

LIGHT-EMITTING-DIODES; PATTERNED SAPPHIRE SUBSTRATE; VAPOR-PHASE EPITAXY; THIN-FILMS; GAN; RAMAN;

D O I：

10.1364/OME.8.001528

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The optical properties of double (a blue and a green) InGaN/GaN multiple quantum wells (MQWs) on unstressed bulk GaN and a compressive stressed GaN template on patterned sapphire substrate (PSS) were investigated. Photoluminescence intensity of green MQWs on bulk GaN was about 6 times higher than that on GaN/PSS, while the intensity difference of blue MQWs was less than two times. It was found that the existing stress played an important role in the difference in luminescence. Furthermore, the V-shape pits in blue MQWs stemmed from the pre-existing dislocations while those in green MQWs were derived from the new dislocations. (C) 2018 Optical Society of America under the terms of the OSA Open Access Publishing Agreement

引用

页码：1528 / 1535

页数：8

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