Formation of Oriented Graphene Nanoribbons over Heteroepitaxial Cu Surfaces by Chemical Vapor Deposition

被引:10
|
作者
Yunus, Rozan Mohamad [1 ]
Miyashita, Masahiro [1 ]
Tsuji, Masaharu [1 ,2 ]
Hibino, Hiroki [3 ]
Ago, Hiroki [1 ,2 ,4 ]
机构
[1] Kyushu Univ, Grad Sch Engn Sci, Fukuoka 8168580, Japan
[2] Kyushu Univ, Inst Mat Chem & Engn IMCE, Fukuoka 8168580, Japan
[3] NTT Corp, NTT Basic Res Labs, Atsugi, Kanagawa 2430198, Japan
[4] Japan Sci & Technol JST, PRESTO, Saitama 3320012, Japan
关键词
SINGLE-LAYER GRAPHENE; RAMAN-SPECTROSCOPY; CARBON NANOTUBES; CATALYTIC GROWTH; DOMAIN-STRUCTURE; FILMS; DEVICES; EDGES; FABRICATION; TRANSISTORS;
D O I
10.1021/cm501854r
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
We demonstrate a new bottom-up approach to synthesize graphene nanoribbons (GNRs) on a Cu(100) film by chemical vapor deposition (CVD) without the use of any lithography and etching processes. Ambient pressure CVD with a low concentration CH4 feedstock produced a number of GNRs with widths of 40-50 nm on a heteroepitaxial Cu(100)/MgO(100) substrate. These nanoribbons are confined inside the nanoscale trenches formed on the Cu surface, and their orientations are highly controlled by the crystallographic orientation of the Cu(100) lattice. Raman spectra taken after the transfer indicated the growth of high-quality, single-layer GNRs. Moreover, low-energy electron microscopy revealed that all these aligned GNRs have the hexagonal orientations whose edges are terminated with zigzag edges. The GNR growth was not observed on Cu foil, and we discuss the growth mechanism of the oriented GNRs over epitaxial Cu(100) film. Our bottom-up approach offers a new method to grow single-layer GNRs which are oriented in a specific directions for future carbon-based nanoelectronics and spintronics applications.
引用
收藏
页码:5215 / 5222
页数:8
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