Advanced Modeling of MISHFET Devices and their Performance in Current-Mode Class-D Power Amplifiers

被引：0

作者：

Cumana, J. ^{[1
]}

Lautensack, C. ^{[1
]}

Eickelkamp, M. ^{[1
]}

Goliasch, J. ^{[1
]}

Noculak, A. ^{[1
]}

Vescan, A. ^{[1
]}

Jansen, R. H. ^{[1
]}

机构：

[1] Rhein Westfal TH Aachen, Chair Electromagnet Theory ITHE, D-52074 Aachen, Germany

来源：

2008 EUROPEAN MICROWAVE INTEGRATED CIRCUITS CONFERENCE (EUMIC) | 2008年

关键词：

FIELD-EFFECT TRANSISTORS; ALGAN/GAN; OXIDE;

D O I：

10.1109/EMICC.2008.4772258

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

GaN HFETs and MISHFETs are promising power devices for RF and microwave power applications. However, the performance of devices can be compromised under some operating conditions. From the device development point of view, device optimization is necessary to obtain the best possible performance. For device modeling and design purposes, the device needs to be characterized and modeled accurately in order to foresee how the device will behave under realistic operating conditions. In this paper, an improved EEHEMT1-based model for GaN MISHFETs, will be introduced. This model is capable of describing the knee region of the device's output characteristics, dispersion effects as well as gate diode behavior accurately. The models will be incorporated in a switched-mode amplifier topology and evaluations will be made to determine the suitability of MISHFETs in these amplifiers.

引用

页码：179 / 182

页数：4

共 50 条

[11] Class-D audio power amplifiers: An overview
Dapkus, D
IEEE INTERNATIONAL CONFERENCE ON CONSUMER ELECTRONICS - 2000 DIGEST OF TECHNICAL PAPERS, 2000, : 400 - 401
[12] Voltage/Current Measurement Performance and Power Supply Rejection in All-Digital Class-D Power Amplifiers
Mauerer, M.
Tuysuz, A.
Kolar, J. W.
PROCEEDINGS OF THE IECON 2016 - 42ND ANNUAL CONFERENCE OF THE IEEE INDUSTRIAL ELECTRONICS SOCIETY, 2016, : 666 - 673
[13] RF Current Mode Class-D Power Amplifiers Under Periodic and Non-periodic Switching Conditions
Abbasian, Sadegh
Johnson, Thomas
2013 IEEE INTERNATIONAL SYMPOSIUM ON CIRCUITS AND SYSTEMS (ISCAS), 2013, : 610 - 613
[14] Modeling based on Elman Wavelet Neural Network for Class-D Power Amplifiers
Wang, Li
Shao, Jie
Zhong, Yaqin
Zhao, Weisong
Malekian, Reza
APPLIED MATHEMATICS & INFORMATION SCIENCES, 2013, 7 (06): : 2445 - 2453
[15] Clock jitter in class-D audio power amplifiers
Berkhout, Marco
ESSCIRC 2007: PROCEEDINGS OF THE 33RD EUROPEAN SOLID-STATE CIRCUITS CONFERENCE, 2007, : 444 - 447
[16] Switching transients in class-D RF power amplifiers
Raab, FH
SEVENTH INTERNATIONAL CONFERENCE ON HF RADIO SYSTEMS AND TECHNIQUES, 1997, (441): : 190 - 194
[17] FREQUENCY AND POWER LIMITATIONS OF CLASS-D TRANSISTOR AMPLIFIERS
CHUDOBIAK, WJ
PAGE, DF
IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1969, SC 4 (01) : 25 - +
[18] On The Performance of Class-D Power Amplifiers With RF Pulse-Width Modulation
Shi, Bo
Chia, Michael Yan Wah
ASIA-PACIFIC MICROWAVE CONFERENCE 2011, 2011, : 1550 - 1553
[19] Design of High Power Class-D Audio Amplifiers
Berkhout, Marco
ANALOG CIRCUIT DESIGN: HIGH-SPEED CLOCK AND DATA RECOVERY, HIGH-PERFORMANCE AMPLIFIERS, POWER MANAGEMENT, 2009, : 209 - 229
[20] Multiband and Wide Dynamic Range Digital Polar Transmitter Using Current-mode Class-D CMOS Power Amplifier
Nakatani, Toshifumi
Kimball, Donald F.
Asbeck, Peter M.
2013 IEEE COMPOUND SEMICONDUCTOR INTEGRATED CIRCUIT SYMPOSIUM (CSICS): INTEGRATED CIRCUITS IN GAAS, INP, SIGE, GAN AND OTHER COMPOUND SEMICONDUCTORS, 2013,

← 1 2 3 4 5 →