Advanced Modeling of MISHFET Devices and their Performance in Current-Mode Class-D Power Amplifiers

被引：0
|
作者：
Cumana, J. [1 ]
Lautensack, C. [1 ]
Eickelkamp, M. [1 ]
Goliasch, J. [1 ]
Noculak, A. [1 ]
Vescan, A. [1 ]
Jansen, R. H. [1 ]
机构：
[1] Rhein Westfal TH Aachen, Chair Electromagnet Theory ITHE, D-52074 Aachen, Germany
来源：
2008 EUROPEAN MICROWAVE INTEGRATED CIRCUITS CONFERENCE (EUMIC) | 2008年
关键词：
FIELD-EFFECT TRANSISTORS; ALGAN/GAN; OXIDE;
D O I：
10.1109/EMICC.2008.4772258
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
GaN HFETs and MISHFETs are promising power devices for RF and microwave power applications. However, the performance of devices can be compromised under some operating conditions. From the device development point of view, device optimization is necessary to obtain the best possible performance. For device modeling and design purposes, the device needs to be characterized and modeled accurately in order to foresee how the device will behave under realistic operating conditions. In this paper, an improved EEHEMT1-based model for GaN MISHFETs, will be introduced. This model is capable of describing the knee region of the device's output characteristics, dispersion effects as well as gate diode behavior accurately. The models will be incorporated in a switched-mode amplifier topology and evaluations will be made to determine the suitability of MISHFETs in these amplifiers.
引用
收藏
页码：179 / 182
页数：4
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