Characterization of large-area arrays of nanoscale Si tips fabricated using thermal oxidation and wet etching of Si pillars

被引:10
|
作者
Umbach, CC
Weselak, BW
Blakely, JM
Shen, Q
机构
[1] CORNELL UNIV,DEPT APPL PHYS,ITHACA,NY 14853
[2] CORNELL UNIV,DEPT ENGN PHYS,ITHACA,NY 14853
[3] CORNELL UNIV,CORNELL HIGH ENERGY SYNCHROTRON SOURCE,ITHACA,NY 14853
来源
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1996年 / 14卷 / 06期
关键词
D O I
10.1116/1.588773
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Two-dimensional periodic arrays containing 10(8) Si pillars with heights of 600-700 nm, widths of 100 nm, and repeat spacings of 300 nm have been fabricated using electron beam lithography on Si(001) substrates. These pillars have subsequently undergone wet oxidation at 800 degrees C and etching in hydrofluoric acid to produce an array of sharp tips with a height of similar to 4000 Angstrom. The x-ray diffraction from this array appears to be dominated by scattering from the bases of the tips. Correlated variations in tip shape, observed with scanning electron microscopy, produce a modulated diffuse background in the diffracted x-ray intensity. These observations demonstrate the feasibility of using high-resolution x-ray diffraction for studying defects in large-area arrays of periodic structures. (C) 1996 American Vacuum Society.
引用
收藏
页码:3420 / 3424
页数:5
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