Effect of gas pressure on hydrogenated amorphous silicon carbide films by hot-wire CVD

被引：0

作者：

Tabata, A ^{[1
]}

Nakajima, T ^{[1
]}

Mizutani, T ^{[1
]}

Suzuoki, Y ^{[1
]}

机构：

[1] Nagoya Univ, Dept Elect Engn, Chikusa Ku, Nagoya, Aichi 4648603, Japan

来源：

PROCEEDINGS OF 3RD WORLD CONFERENCE ON PHOTOVOLTAIC ENERGY CONVERSION, VOLS A-C | 2003年

关键词：

D O I：

暂无

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

Hydrogenated amorphous silicon carbide (a-Si1-xCx:H) films were prepared by hot-wire chemical vapor deposition (CVD) using methane as a carbon source at a low tungsten temperature of 1400 degreesC, and the effect of gas pressure on the film properties and structure was investigated. The infrared absorption spectra revealed that Si-C bonds increased with increasing gas pressure from I to 4 Torr. Consequently, the optical band gap increased from 1.8 to 2.2 eV. The deposition rate was 1.2 nms(-1) at 4 Torr and higher than that in plasma-enhanced CVD deposition by about one order of magnitude. It was found that a-Si1-xCx:H films with an optical band gap over 2.0 eV could be easily prepared by control of gas pressure even at a low tungsten temperature of 1400 degreesC and at a higher deposition rate.

引用

页码：1703 / 1705

页数：3

共 50 条

[31] A narrow process window for the preparation of polytypes of microcrystalline silicon carbide thin films by hot-wire CVD method
Yoshida, Norimitsu
Terazawa, Sho
Hayashi, Kotaro
Hamaguchi, Tomonari
Natsuhara, Hironori
Nonomura, Shuichi
JOURNAL OF NON-CRYSTALLINE SOLIDS, 2012, 358 (17) : 1987 - 1989
[32] Fabrication of amorphous boron-carbon-nitrogen films by hot-wire CVD
Yokomichi, H
Futakuchi, T
Yasuoka, M
Kishimoto, N
JOURNAL OF NON-CRYSTALLINE SOLIDS, 2004, 338 : 509 - 512
[33] Hot-wire CVD thin silicon films on crystalline silicon for solar cell applications
Voz, C
Martin, I
Orpella, A
Vetter, M
Puigdollers, J
Alcubilla, R
Soler, D
Fonrodona, M
Bertomeu, J
Andreu, J
PROCEEDINGS OF 3RD WORLD CONFERENCE ON PHOTOVOLTAIC ENERGY CONVERSION, VOLS A-C, 2003, : 1225 - 1228
[34] Characterization of silicon nitride thin films deposited by hot-wire CVD at low gas flow rates
Oliphant, Clive J.
Arendse, Christopher J.
Muller, Theophillus F. G.
Knoesen, Dirk
APPLIED SURFACE SCIENCE, 2013, 285 : 440 - 449
[35] Production of Amorphous and Nanocrystalline Silicon Films by the Hot-Wire Activation Method
Andreev M.N.
Rebrov A.K.
Safonov A.I.
Timoshenko N.I.
Kubrak K.V.
Sulyaeva V.S.
Journal of Engineering Physics and Thermophysics, 2015, 88 (4) : 1003 - 1007
[36] Deposition of amorphous silicon films by hot-wire chemical vapor deposition
Feenstra, KF
Schropp, REI
Van der Weg, WF
JOURNAL OF APPLIED PHYSICS, 1999, 85 (09) : 6843 - 6852
[37] Influence of gas supply and filament geometry on the large-area deposition of amorphous silicon by hot-wire CVD
Ledermann, A
Weber, U
Mukherjee, C
Schroeder, B
THIN SOLID FILMS, 2001, 395 (1-2) : 61 - 65
[38] Electronic properties and device applications of hot-wire CVD polycrystalline silicon films
Middya, AR
Guillet, J
Brenot, R
Perrin, J
Bouree, JE
Longeaud, C
Kleider, JP
AMORPHOUS AND MICROCRYSTALLINE SILICON TECHNOLOGY - 1997, 1997, 467 : 271 - 282
[39] Cat-CVD (hot-wire CVD): how different from PECVD in preparing amorphous silicon
Matsumura, H
Umemoto, H
Masuda, A
JOURNAL OF NON-CRYSTALLINE SOLIDS, 2004, 338 : 19 - 26
[40] Structural and electrical properties of polycrystalline silicon films deposited by hot-wire CVD
Lee, JC
Kang, KH
Kim, SK
Yoon, KH
Song, JS
Park, IJ
SOLAR ENERGY MATERIALS AND SOLAR CELLS, 2002, 74 (1-4) : 233 - 245

← 1 2 3 4 5 →