A low-phase-noise K-band CMOS VCO

被引：52

作者：

Hsieh, Hsieh-Hung ^{[1
]}

Lu, Liang-Hung ^{[1
]}

机构：

[1] Natl Taiwan Univ, Dept Elect Engn, Grad Inst Elect Engn, Taipei 10617, Taiwan

来源：

IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS | 2006年 / 16卷 / 10期

关键词：

capacitive feedback; CMOS radio frequency (RF); differential colpitts oscillators; K-band; LC-tank; low phase noise; voltage-controlled oscillators (VCOs);

D O I：

10.1109/LMWC.2006.882386

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A novel circuit topology for low-phase-noise voltage controlled oscillators (VCOs) is presented in this letter. By employing a PMOS cross-coupled pair with a capacitive feedback, superior circuit performance can be achieved especially at higher frequencies. Based on the proposed architecture, a prototype VCO implemented in a 0.18-mu m CMOS process is demonstrated for K-band applications. From the measurement results, the VCO exhibits a 510-MHz frequency tuning range at 20 GHz. The output power and the phase noise at 1-MHz offset are -3 dBm and -111 dBc/Hz, respectively. The fabricated circuit consumes a dc power of 32 mW from a 1.8-V supply voltage.

引用

页码：552 / 554

页数：3

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