Growth of subnanometer-thin Si overlayer on TiO2(110)-(1x2) surface

被引：14
|
作者：
Abad, J [1 ]
Rogero, C [1 ]
Méndez, J [1 ]
López, MF [1 ]
Martin-Gago, JA [1 ]
Román, E [1 ]
机构：
[1] CSIC, Inst Ciencia Mat, Madrid 6, Spain
来源：
APPLIED SURFACE SCIENCE | 2004年 / 234卷 / 1-4期
关键词：
titanium oxide; rutile; silicon; silicon oxide; X-ray photoelectron spectroscopy (XPS); ultraviolet photoelectron spectroscopy (UPS); low energy electron diffraction (LEED); scanning tunneling microscopy (STM); surface oxidation;
D O I：
10.1016/j.apsusc.2004.05.082
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
The growth of subnanometer silicon overlayers on TiO2 (1 1 0)-(1 x 2) reconstructed surfaces at room temperature (RT) has been studied by X-ray and ultra-violet photoelectron spectroscopies (XPS and UPS), low energy electron diffraction (LEED) and scanning tunneling microscopy (STM). For Si coverage of 1 monolayer (ML) only Si2+ species were detected on top of a further reduced TiO2 surface. Upon Si coverage, the characteristic (1 x 2) LEED pattern from the substrate is completely attenuated, indicating absence of long-range order. Therefore, the combination of all the above mentioned techniques, indicates that the Si overlayer consists of a smooth and homogeneous Si oxide layer on a reduced TiO2 surface. (C) 2004 Elsevier B.V. All rights reserved.
引用
收藏
页码：497 / 502
页数：6
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