Silicon sensors for the CMS preshower detector

被引：8
|
作者：
Bloch, P
Chang, YH
Chen, AE
Cheremukhin, A
Egorov, N
Go, A
Golubkov, S
Golutvin, I
Hou, SR
Konjkov, K
Kozlov, Y
Kyriakis, A
Lin, WT
Loukas, D
Markou, A
Mousa, J
Peisert, A [1 ]
Sidorov, A
Tsoi, E
Zamiatin, N
Zubarev, E
机构：
[1] CERN, Geneva, Switzerland
[2] NCU, Chungli, Taiwan
[3] Joint Inst Nucl Res Dubna, Dubna, Russia
[4] RIMST, ELMA, Zelenograd, Russia
[5] NCSR Demokritos, Athens, Greece
来源：
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT | 2002年 / 479卷 / 2-3期
关键词：
CMS; preshower; silicon strips; radiation hardness;
D O I：
10.1016/S0168-9002(01)00900-7
中图分类号：
TH7 [仪器、仪表];
学科分类号：
0804 ; 080401 ; 081102 ;
摘要：
This paper is a summary of a research and development programme, conducted during the past 3 years on the CMS Preshower silicon sensors to define the specifications. The main purpose was to study the radiation hardness of these devices resulting from the specific design (metal lines wider than the p(+) implants) and the production technology, a deep n(+) layer on the ohmic side. An acceptable noise and a uniform charge collection were guaranteed by an appropriate choice of the interstrip region width. About 65 sensors, of different designs and produced by six manufacturers, were irradiated with neutrons and protons and thoroughly tested before and after irradiation. The results of the tests and the final specifications are presented. (C) 2002 Elsevier Science B.V. All rights reserved.
引用
收藏
页码：265 / 277
页数：13
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