Early stage of the crystallization in amorphous Fe-Si layers: Formation and growth of metastable α-FeSi2

被引：4

作者：

Naito, Muneyuki ^{[1
]}

Ishimaru, Manabu ^{[1
]}

机构：

[1] Osaka Univ, Inst Sci & Ind Res, Osaka 5670047, Japan

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 2009年 / 267卷 / 8-9期

关键词：

Iron silicides; Ion implantation; Metastable phase; ION-BEAM SYNTHESIS; EPITAXIAL-GROWTH; LOW-TEMPERATURE; STRUCTURAL-CHARACTERIZATION; IRON DISILICIDE; CUBIC FESI2; SI(111); BETA-FESI2; FILMS;

D O I：

10.1016/j.nimb.2009.01.035

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

Crystallization processes of amorphous Fe-Si layers have been investigated using transmission electron microscopy (TEM). Si(1 1 1) substrates were irradiated with 120 keV Fe ions at -150 degrees C to a fluence of 1.0 x 10(17) cm(2). An Fe-rich amorphous layer embedded in an amorphous Si was formed in the as-irradiated sample. Plan-view TEM observations revealed that a part of the amorphous Fe-Si layer crystallized to the metastable alpha-FeSi2 after thermal annealing at 350 degrees C for 8 h. The lattice parameter of c-axis decreased with thermal annealing. It was considered that the change in the lattice parameter originates from the decrease of the Fe occupancy at (0,0, 1/2) and its equivalent positions in the unit cell of the metastable alpha-FeSi2. (C) 2009 Elsevier B.V. All rights reserved.

引用

页码：1290 / 1293

页数：4

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