Electron mobility enhancement in AlN/GaN/AlN heterostructures with InGaN nanogrooves

被引：33
|
作者：
Pokatilov, E. P. [1 ]
Nika, D. L. [1 ]
Balandin, A. A. [1 ]
机构：
[1] Univ Calif Riverside, Dept Elect Engn, Nanodevice Lab, Riverside, CA 92521 USA
来源：
APPLIED PHYSICS LETTERS | 2006年 / 89卷 / 11期
基金：
美国国家科学基金会;
关键词：
FIELD-EFFECT TRANSISTORS; FUNDAMENTAL-BAND GAP; PHONON CONFINEMENT; ALGAN/GAN HFETS; QUANTUM-WELL; LAYERS; INN; SCATTERING; NOISE;
D O I：
10.1063/1.2349302
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The authors show that the electron mobility can be strongly enhanced in AlN/GaN/AlN heterostructures with the shallow InxGa1-xN channel-nanogroove-in the middle of the potential well. The modified heterostructure has the room-temperature electron mobility, which is five times larger than that in conventional quantum wells. The maximum mobility enhancement is achieved for In content x approximate to 0.05, which is sufficient to weaken the intersubband electron scattering without leading to the substantial electron-interface-phonon scattering. The mobility enhancement is pronounced for a wide range of the carrier densities (10(11)-10(13) cm(-2)), which is important for GaN technology. (c) 2006 American Institute of Physics.
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页数：3
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