Compact, low threshold Nd3+:YVO4 self-Raman laser at 1178nm

被引：0

作者：

Wang Bao-Shan ^{[1
]}

Tan Hui-Ming

Gao Lan-Lan

Peng Ji-Ying

Miao Jie-Guang

机构：

[1] Chinese Acad Sci, Changchun Inst Opt Fine Mech & Phys, Changchun 130033, Peoples R China

[2] Chinese Acad Sci, Grad Sch, Beijing 100080, Peoples R China

来源：

CHINESE PHYSICS LETTERS | 2006年 / 23卷 / 08期

关键词：

D O I：

暂无

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

A compact low-threshold Raman laser at 1178 nm is experimentally realized by using a diode-end-pumped actively Q-switched Nd3+:YVO4 self-Raman laser. The threshold is 370 mW at a pulse repetition frequency of 5 kHz. The maximum Raman laser output is 182 mW with the pulse duration smaller than 20 ns at a pulse repetition frequency of 30 kHz with 1.8 W incident power. The optical efficiency from the incident power to the Raman laser is 10% and the slope efficieny is 13.5%.

引用

页码：2095 / 2097

页数：3

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