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Exchange biased spin polarizer with an embedded nano-oxide layer for a substantially lower switching current density
被引:5
|作者:
Nguyen, Hoang Yen Thi
Yi, Hyunjung
Joo, Sung-Jung
Shin, Kyung-Ho
Lee, Kyung-Jin
Dieny, Bernard
机构:
[1] Korea Inst Sci & Technol, Nano Device Res Ctr, Seoul 130650, South Korea
[2] Korea Univ, Dept Mat Sci & Engn, Seoul 136713, South Korea
[3] CEA Grenoble, CNRS, URA, Spintec, F-38054 Grenoble, France
关键词:
D O I:
10.1063/1.2337532
中图分类号:
O59 [应用物理学];
学科分类号:
摘要:
The authors demonstrate that the spin polarizer in the form of an exchange biased ferromagnetic lead with an embedded nano-oxide layer can greatly enhance the spin transfer torque for the current induced magnetization switching. By applying it in spin valves, the switching current density (4x10(6) A/cm(2)) is one order lower and the resistance change (2.78 m Omega mu m(2)) is three times higher than those gotten by using a simple spin polarizer. This spin torque enhancement is attributed to the exchange bias pinning acting on the polarizer (the fixed layer) with effective support of the nano-oxide layer, which together lead to a much higher current spin polarization. (c) 2006 American Institute of Physics.
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