Characterization of aluminium nitride nanostructures by XANES and FTIR spectroscopies with synchrotron radiation

We investigated different AlN nano-systems using spectroscopic methods. Experiments were performed at the Synchrotron Radiation Facility of the Laboratori Nazionali di Frascati using both XANES (x-ray absorption near edge spectroscopy) and FTIR ( Fourier transform infrared spectroscopy) techniques in order to investigate materials with both interesting tribological and electronic properties. Comparisons have been performed between measurements by standard x-ray diffraction (XRD) and x-ray absorption (XRS) at the K-edge of Al, a spectroscopy method sensitive to the local order and correlated to the local and empty density of states of this wide band-gap semiconductor. Preliminary XAS simulations at the Al K edge are also presented. Correlations between XRD and XAS have been drawn, since x-ray absorption reveals structural information complementary to that addressed by x-ray diffraction. Moreover, a comparison has been performed by infrared (IR) absorption both in the mid- and in the far-IR ranges between different AlN forms: namely, powders, nanoparticles and nanotubes. Data clearly show changes connected with the electronic properties and the optical phonon modes of AlN nano-systems.