The study of high-power hollow-beam laser diode

被引：1
|
作者：
Ling, Ming [1 ]
Wu, Zhichao [2 ]
Zhang, Xiangwei [2 ]
He, Yanfei [1 ]
机构：
[1] Shanghai Univ Engn Sci, Sch Elect & Elect Engn, Shanghai 201620, Peoples R China
[2] Xian Technol Univ, Sch Optoelect Engn, Xian 710021, Shaanxi, Peoples R China
来源：
OPTIK | 2019年 / 182卷
关键词：
Hollow beam; Semiconductor laser; High-power; Finite element; BOTTLE; GENERATION;
D O I：
10.1016/j.ijleo.2019.01.089
中图分类号：
O43 [光学];
学科分类号：
070207 ; 0803 ;
摘要：
High-Power VCSEL is one of the most promising semiconductor laser sources with more advantages such as lower threshold current, compact size, efficiently fiber coupling, long lifetime compared to other types of lasers. Thanks to its slice feature, VCSEL has been the most potential light source emitting hollow laser beam. In this experiment, part of center area of P-DBRs was etched to increase the threshold of the center area of VCSEL and force carriers to gather on the edge of the VCSEL. As a result, a hollow laser beam with an output power of 350 mW and a circular optical filed distribution has been obtained.
引用
收藏
页码：727 / 730
页数：4
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