3D MOS-transistor Elements in Smart-Sensors Based on SOI-structures

被引：0
|
作者：
Druzhinin, Anatoly [1 ]
Khoverko, Yuriy [1 ]
Kogut, Igor [2 ]
Holota, Victor [2 ]
机构：
[1] Lviv Polytech Natl Univ, SE Dept, S Bandery St 12, Lvov, Ukraine
[2] Precarpathian Natl Univ, Comp Engn & Elect Dept, Ivano Frankivsk, Ukraine
来源：
2018 XIVTH INTERNATIONAL CONFERENCE ON PERSPECTIVE TECHNOLOGIES AND METHODS IN MEMS DESIGN (MEMSTECH) | 2018年
关键词：
SOI-structure; Smart-Sensors; MOS-transistor; POLYSILICON; INSULATOR;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
In this paper a modified design of the MOS-transistor in the smart-sensors based on SOI-structure is proposed, in which the surface of the subchannel region is made in the form of a cylinder segment oriented along the drain-source areas of the transistor. The dependence of the drain current of such a transistor reaches almost 10-3 mu A/mu m from the voltage at the outlet at different voltage values at the gate, which is an order of magnitude higher than for similar operating conditions of traditional MON-transistors.
引用
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页码：1 / 4
页数：4
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