3D MOS-transistor Elements in Smart-Sensors Based on SOI-structures

被引：0

作者：

Druzhinin, Anatoly ^{[1
]}

Khoverko, Yuriy ^{[1
]}

Kogut, Igor ^{[2
]}

Holota, Victor ^{[2
]}

机构：

[1] Lviv Polytech Natl Univ, SE Dept, S Bandery St 12, Lvov, Ukraine

[2] Precarpathian Natl Univ, Comp Engn & Elect Dept, Ivano Frankivsk, Ukraine

来源：

2018 XIVTH INTERNATIONAL CONFERENCE ON PERSPECTIVE TECHNOLOGIES AND METHODS IN MEMS DESIGN (MEMSTECH) | 2018年

关键词：

SOI-structure; Smart-Sensors; MOS-transistor; POLYSILICON; INSULATOR;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this paper a modified design of the MOS-transistor in the smart-sensors based on SOI-structure is proposed, in which the surface of the subchannel region is made in the form of a cylinder segment oriented along the drain-source areas of the transistor. The dependence of the drain current of such a transistor reaches almost 10-3 mu A/mu m from the voltage at the outlet at different voltage values at the gate, which is an order of magnitude higher than for similar operating conditions of traditional MON-transistors.

引用

页码：1 / 4

页数：4

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