Femtosecond dynamics of exciton bleaching in bulk GaN at room temperature

被引：10
|
作者：
Huang, YC
Chern, GW
Lin, KH
Liang, JC
Sun, CK [1 ]
Hsu, CC
Keller, S
DenBaars, SP
机构：
[1] Natl Taiwan Univ, Dept Elect Engn, Taipei 10617, Taiwan
[2] Natl Taiwan Univ, Grad Inst Electro Opt Engn, Taipei 10617, Taiwan
[3] Natl Chung Cheng Univ, Dept Phys, Chiayi, Taiwan
[4] Univ Calif Santa Barbara, Dept Elect & Comp Engn, Santa Barbara, CA 93106 USA
来源：
APPLIED PHYSICS LETTERS | 2002年 / 81卷 / 01期
关键词：
D O I：
10.1063/1.1491296
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Femtosecond transient transmission pump-probe technique was used to investigate exciton dynamics in a nominally undoped GaN thin film at room temperature. An exciton ionization time of 100-250 femtoseconds was observed by the time-resolved pump-probe measurement. A comparison experiment with pre-excited free carriers also confirmed the observation of the exciton ionization process in bulk GaN. (C) 2002 American Institute of Physics.
引用
收藏
页码：85 / 87
页数：3
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