An organic-inorganic hybrid perovskite logic gate for better computing

被引:80
|
作者
Lin, Guoming [1 ,2 ]
Lin, Yuanwei [3 ,4 ]
Cui, Rongli [1 ]
Huang, Huan [1 ]
Guo, Xihong [1 ]
Li, Cheng [1 ,2 ]
Dong, Jinquan [1 ]
Guo, Xuefeng [3 ,5 ]
Sun, Baoyun [1 ]
机构
[1] Chinese Acad Sci, CAS Key Lab Biomed Effects Nanomat & Nanosafety, Inst High Energy Phys, Beijing 100049, Peoples R China
[2] Univ Chinese Acad Sci, Beijing 100049, Peoples R China
[3] Peking Univ, BNLMS, State Key Lab Struct Chem Unstable & Stable Speci, Coll Chem & Mol Engn, Beijing 100871, Peoples R China
[4] Peking Univ, Ctr Nanosci & Nanotechnol, Acad Adv Interdisciplinary Studies, Beijing 100871, Peoples R China
[5] Peking Univ, Dept Adv Mat & Nanotechnol, Coll Engn, Beijing 100871, Peoples R China
基金
中国国家自然科学基金;
关键词
NONVOLATILE MEMORY; MEMRISTIVE DEVICES;
D O I
10.1039/c5tc02270c
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
A practicable means of significantly reducing the energy consumption and speeding up the operating rate of computer chips is to place the processor and memory into one device, which processes and stores information simultaneously like the human brain. Here we demonstrate a novel sandwich architecture where organic-inorganic hybrid perovskite materials could be used as building-block materials for non-volatile memristors, accompanied with photoresponsive performance. Owing to the distinct photoresponse of the two resistance states of the memristor, it is feasible to utilize the device as a logic OR gate by employing an electrical field and light illumination as input sources. This study provides potential applications in logic circuits, optical digital computation and optical quantum information for beneficial supplementation of the von Neumann architecture, or even for computing beyond it.
引用
收藏
页码:10793 / 10798
页数:6
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