Silated acidic copolymers for nanoimprint lithography on flexible plastic substrates

被引：6

作者：

Liao, Wen-chang ^{[1
]}

Hsu, Steve Lien-Chung ^{[1
]}

Lin, Jui-Chen ^{[1
]}

机构：

[1] Natl Cheng Kung Univ, Dept Mat Sci & Engn, Tainan 70101, Taiwan

来源：

MICROELECTRONIC ENGINEERING | 2007年 / 84卷 / 01期

关键词：

nanoimprint lithography; reactive ion etching resistability; silated acidic polymer; flexible plastic substrate;

D O I：

10.1016/j.mee.2006.09.002

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A new silated acidic polymer was developed as the resist for nanoimprint lithography on flexible substrates. This polymer was synthesized from methylmethacrylate, n-butylacrylate, methacrylic acid and 3-[tris(trimethylsiloxy)silyl]propyI methacrylate by free radical copolymerization with an azobisisobutyronitrile (AIBN) initiator at 90 degrees C. The resist has excellent reactive ion etching (RIE) resistability, a lower T-g (43 degrees C) compared to poly(methyl methacrylate) (PMMA) and good flowability. It is suitable to use on flexible plastic substrates. The resist can be easily removed by an aqueous base solution at the final stripping step, instead of using an organic solvent or RIE. A 100 nm/50 nm (line/space) feature pattern was obtained on a flexible polyethylene terephthalate (PET)/ITO substrate. (c) 2006 Elsevier B.V. All rights reserved.

引用

页码：129 / 135

页数：7

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