Electrical and Compositional Characterization of Gallium Grading in Cu(In,Ga)Se2 Solar Cells

被引：0
|
作者：
West, Bradley [1 ]
Guthrey, Harvey [2 ]
Chen, Lei [3 ]
Jeffries, April [1 ]
Bernardini, Simone [1 ]
Lai, Barry [4 ]
Maser, Joerg [4 ]
Shafarman, William [3 ]
Al-Jasim, Mowafak [2 ]
Bertoni, Mariana [1 ]
机构：
[1] Arizona State Univ, Ira A Fulton Sch Engn, Tempe, AZ 85287 USA
[2] Natl Renewable Energy Lab, Golden, CO 80401 USA
[3] Univ Delaware, Inst Energy Convers, Newark, DE 19716 USA
[4] Argonne Natl Lab, Adv Photon Source, Argonne, IL 60439 USA
来源：
2014 IEEE 40TH PHOTOVOLTAIC SPECIALIST CONFERENCE (PVSC) | 2014年
关键词：
thin film; chalcopyrite; CIGS; band gap grading; synchrotron; x-ray fluorescence; EBIC;
D O I：
暂无
中图分类号：
TE [石油、天然气工业]; TK [能源与动力工程];
学科分类号：
0807 ; 0820 ;
摘要：
Cu(In,Ga)Se-2 (CIGS) solar cells were characterized in cross section using electron beam induced current (EBIC) and synchrotron based x-ray fluorescence (XRF) measurements. Samples with varying gallium ratios and growth methods were compared. A correlation was observed between the compositional gallium grading profile from XRF and carrier activity seen in EBIC through the thickness of the CIGS layer. Samples with steep back grading showed carrier activity isolated near the CIGS/CdS interface, whereas a more uniform grading resulted in carrier activity seen throughout the absorber layer. 'Notch' grading showed only slight variation in EBIC profile compared to a back graded sample with similar gallium ratios.
引用
收藏
页码：1726 / 1728
页数：3
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