Simulation study of dimensional effect on bipolar resistive random access memory

被引：1

作者：

Liu Kai ^{[1
]}

Zhang Kailiang ^{[1
]}

Wang Fang ^{[1
,2
]}

Zhao Jinshi ^{[1
]}

Wei Jun ^{[3
]}

机构：

[1] Tianjin Univ Technol, Sch Elect Informat Engn, Tianjin Key Lab Film Elect & Commun Devices, Tianjin 300384, Peoples R China

[2] Tianjin Univ, Tianjin 300072, Peoples R China

[3] Singapore Inst Mfg Technol, Singapore 638075, Singapore

来源：

INTERNATIONAL JOURNAL OF NANOTECHNOLOGY | 2014年 / 11卷 / 1-4期

基金：

中国国家自然科学基金;

关键词：

RRAM; power consumption; electric parameter; computational simulation; nanotechnology;

D O I：

10.1504/IJNT.2014.059813

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

The dependency of the RRAM device electrical parameters such as set voltage, reset current and resistance on the RRAM cell dimensional scalability is investigated with Monte Carlo simulation to optimise the power consumption of bipolar RRAM. It is found in the simulation that the switching process in bipolar RRAM is related to the cell dimension in the region of 10 nm to 100 nm in terms of its horizontal length. The suppressing effect of existing conducting filament is also discussed. With optimal cell size sufficient initial resistance and a low forming voltage will be achieved, accelerating the feasibility of the high-density low-power RRAM.

引用

页码：97 / 105

页数：9

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