LOADING RATE EFFECT ON THE DOMAIN SWITCHING OF FERROELECTRIC MATERIALS

被引:0
|
作者
Achuthan, Ajit [1 ]
Sun, Chin-Teh [1 ]
机构
[1] GE Res Ctr, Niskayuna, NY 12309 USA
关键词
ROOM-TEMPERATURE CREEP; FINITE-ELEMENT MODEL; CERAMICS; BEHAVIOR;
D O I
暂无
中图分类号
TP18 [人工智能理论];
学科分类号
081104 ; 0812 ; 0835 ; 1405 ;
摘要
A method to characterize the strain electric field butterfly behavior based on the underlying domain switching mechanism is presented at first. The effect of loading rate on the different characteristics of the strain electric-field-butterfly behavior is then studied. By comparing the changes in these characteristics under different loading rates, it is established that the loading rate dependence of the strain electric field butterfly behavior is mainly due to two factors, 1) the dependence of the switching of individual domains on the magnitude and duration of the loading time and 2) the variation of the transition electric field with the loading rate. Several interesting attributes of the domain switching behavior that may shed light on understanding the underlying mechanism of domain switching further is illustrated in the present study. The present study also demonstrates that the method of characterizing the strain electric butterfly based on the underlying domain switching mechanism is very effective in studying ferroelectric behavior under different loading conditions.
引用
收藏
页码:539 / 547
页数:9
相关论文
共 50 条
  • [41] Toughening and weakening in ferroelectric ceramics by domain-switching process under mixed electric and mechanical loading
    Han, XL
    Li, XJ
    Mao, SX
    METALLURGICAL AND MATERIALS TRANSACTIONS A-PHYSICAL METALLURGY AND MATERIALS SCIENCE, 2002, 33 (09): : 2835 - 2845
  • [42] Toughening and weakening in ferroelectric ceramics by domain-switching process under mixed electric and mechanical loading
    Xueli Han
    Xuejun Li
    Scott X. Mao
    Metallurgical and Materials Transactions A, 2002, 33 : 2835 - 2845
  • [43] Effect of stress state on the domain configuration and switching behavior in ferroelectric thin films
    Narayanan, Manoj
    Pan, Mengchun
    Liu, Shanshan
    Tong, Sheng
    Hong, Seungbum
    Ma, Beihai
    Balachandran, Uthamalingam
    RSC ADVANCES, 2012, 2 (31): : 11901 - 11907
  • [44] 90° ferroelectric domain switching effect on interfacial strain mediated magnetoelectric coupling
    Sadat, T.
    Faurie, D.
    Godard, P.
    Thiaudiere, D.
    Renault, P-O
    Zighem, F.
    JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2020, 53 (14)
  • [45] ADVANCED FERROELECTRIC MFC ACTUATORS: THE EFFECT OF FERRO-ELASTIC DOMAIN SWITCHING
    Kushnir, Uri
    Rabinovitch, Oded
    PROCEEDINGS OF THE 9TH BIENNIAL CONFERENCE ON ENGINEERING SYSTEMS DESIGN AND ANALYSIS - 2008, VOL 1, 2009, : 595 - 600
  • [46] Domain topology and domain switching kinetics in a hybrid improper ferroelectric
    Huang, F. -T.
    Xue, F.
    Gao, B.
    Wang, L. H.
    Luo, X.
    Cai, W.
    Lu, X. -Z.
    Rondinelli, J. M.
    Chen, L. Q.
    Cheong, S. -W.
    NATURE COMMUNICATIONS, 2016, 7
  • [47] Domain topology and domain switching kinetics in a hybrid improper ferroelectric
    F. -T. Huang
    F. Xue
    B. Gao
    L. H. Wang
    X. Luo
    W. Cai
    X. -Z. Lu
    J. M. Rondinelli
    L. Q. Chen
    S. -W. Cheong
    Nature Communications, 7
  • [48] DOMAIN SWITCHING PHENOMENON IN A FERROELECTRIC WITH FREE SURFACE
    Rosenman, G.
    Kugel, V. D.
    FERROELECTRICS, 1994, 157 (01) : 105 - 110
  • [49] Domain switching phenomenon in a ferroelectric with free surface
    Rosenman, G.
    Kugel, V.D.
    Ferroelectrics, 1994, 157 (1 -4 pt 7) : 105 - 110
  • [50] Mixture theory of domain switching in ferroelectric ceramics
    Huo, YZ
    Jiang, Q
    MATHEMATICS AND CONTROL IN SMART STRUCTURES: SMART STRUCTURES AND MATERIALS 1996, 1996, 2715 : 448 - 459