Operating Mechanism of Electrically Bistable Memory Device Based on Ag Doped CdSe/PVA Nanocomposite

This paper reports the fabrication and characterization of electrically bistable memory device with device structure Al/Ag doped CdSe/PVA nanocomposite/Ag. Current-Voltage (I-V) measurements show two conductivity states at the same applied voltage indicating the bistability behavior. The possible operating mechanism for the memory effects has been described. During transition from the low resistance state to high resistance state, the current follows the change from the injection emission to the space charge limited conduction mechanism. The achieved results demonstrate that the device based on Ag doped CdSe/PVA nanocomposite has a potential for future non-volatile memory devices.