Wake-up effects in Si-doped hafnium oxide ferroelectric thin films

被引：338
|
作者：
Zhou, Dayu [1 ,2 ,3 ]
Xu, Jin [4 ]
Li, Qing [1 ]
Guan, Yan [1 ]
Cao, Fei [5 ]
Dong, Xianlin [5 ]
Mueller, Johannes [6 ]
Schenk, Tony [7 ]
Schroeder, Uwe [7 ]
机构：
[1] Dalian Univ Technol, Sch Mat Sci & Engn, Dalian 116024, Peoples R China
[2] Dalian Univ Technol, Key Lab Mat Modificat Laser Ion & Elect Beams, Minist Educ, Dalian 116024, Peoples R China
[3] Univ Elect Sci & Technol China, State Key Lab Elect Thin Films & Integrated Devic, Chengdu 610054, Peoples R China
[4] Dalian Neusoft Univ Informat, Dept Elect Engn, Dalian 116023, Peoples R China
[5] Chinese Acad Sci, Key Lab Inorgan Funct Mat & Devices, Shanghai Inst Ceram, Shanghai 200050, Peoples R China
[6] Fraunhofer IPMS CNT, D-01109 Dresden, Germany
[7] Tech Univ Dresden, Namlab gGmbH, D-01187 Dresden, Germany
来源：
APPLIED PHYSICS LETTERS | 2013年 / 103卷 / 19期
关键词：
CAPACITORS; RETENTION; FATIGUE;
D O I：
10.1063/1.4829064
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Hafnium oxide based ferroelectric thin films have shown potential as a promising alternative material for non-volatile memory applications. This work reports the switching stability of a Si-doped HfO2 film under bipolar pulsed-field operation. High field cycling causes a "wake-up" in virgin "pinched" polarization hysteresis loops, demonstrated by an enhancement in remanent polarization and a shift of negative coercive voltage. The rate of wake-up is accelerated by either reducing the frequency or increasing the amplitude of the cycling field. We suggest de-pinning of domains due to reduction of the defect concentration at bottom electrode interface as origin of the wake-up. (C) 2013 AIP Publishing LLC.
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收藏
页数：4
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