Wake-up effects in Si-doped hafnium oxide ferroelectric thin films

被引：338
|
作者：
Zhou, Dayu [1 ,2 ,3 ]
Xu, Jin [4 ]
Li, Qing [1 ]
Guan, Yan [1 ]
Cao, Fei [5 ]
Dong, Xianlin [5 ]
Mueller, Johannes [6 ]
Schenk, Tony [7 ]
Schroeder, Uwe [7 ]
机构：
[1] Dalian Univ Technol, Sch Mat Sci & Engn, Dalian 116024, Peoples R China
[2] Dalian Univ Technol, Key Lab Mat Modificat Laser Ion & Elect Beams, Minist Educ, Dalian 116024, Peoples R China
[3] Univ Elect Sci & Technol China, State Key Lab Elect Thin Films & Integrated Devic, Chengdu 610054, Peoples R China
[4] Dalian Neusoft Univ Informat, Dept Elect Engn, Dalian 116023, Peoples R China
[5] Chinese Acad Sci, Key Lab Inorgan Funct Mat & Devices, Shanghai Inst Ceram, Shanghai 200050, Peoples R China
[6] Fraunhofer IPMS CNT, D-01109 Dresden, Germany
[7] Tech Univ Dresden, Namlab gGmbH, D-01187 Dresden, Germany
来源：
APPLIED PHYSICS LETTERS | 2013年 / 103卷 / 19期
关键词：
CAPACITORS; RETENTION; FATIGUE;
D O I：
10.1063/1.4829064
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Hafnium oxide based ferroelectric thin films have shown potential as a promising alternative material for non-volatile memory applications. This work reports the switching stability of a Si-doped HfO2 film under bipolar pulsed-field operation. High field cycling causes a "wake-up" in virgin "pinched" polarization hysteresis loops, demonstrated by an enhancement in remanent polarization and a shift of negative coercive voltage. The rate of wake-up is accelerated by either reducing the frequency or increasing the amplitude of the cycling field. We suggest de-pinning of domains due to reduction of the defect concentration at bottom electrode interface as origin of the wake-up. (C) 2013 AIP Publishing LLC.
引用
收藏
页数：4
相关论文
共 50 条
  • [1] Aging in Ferroelectric Si-Doped Hafnium Oxide Thin Films
    Mart, Clemens
    Kohlenbach, Nico-Dominik
    Kuehnel, Kati
    Esslinger, Sophia
    Czernohorsky, Malte
    Ali, Tarek
    Weinreich, Wenke
    Eng, Lukas M.
    PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS, 2021, 15 (05):
  • [2] Phase Transformations Driving Biaxial Stress Reduction During Wake-Up of Ferroelectric Hafnium Zirconium Oxide Thin Films
    Jaszewski, Samantha T.
    Fields, Shelby S.
    Calderon, Sebastian
    Aronson, Benjamin L.
    Beechem, Thomas E.
    Kelley, Kyle P.
    Zhang, Casey
    Lenox, Megan K.
    Brummel, Ian A.
    Dickey, Elizabeth C.
    Ihlefeld, Jon F.
    ADVANCED ELECTRONIC MATERIALS, 2024, 10 (11):
  • [3] Phase-Exchange-Driven Wake-Up and Fatigue in Ferroelectric Hafnium Zirconium Oxide Films
    Fields, Shelby S.
    Smith, Sean W.
    Ryan, Philip J.
    Jaszewski, Samantha T.
    Brummel, Ian A.
    Salanova, Alejandro
    Esteves, Giovanni
    Wolfley, Steve L.
    Henry, M. David
    Davids, Paul S.
    Ihlefeld, Jon F.
    ACS APPLIED MATERIALS & INTERFACES, 2020, 12 (23) : 26577 - 26585
  • [4] Ferroelectric Polarization-Switching Dynamics and Wake-Up Effect in Si-Doped HfO2
    Lee, Tae Yoon
    Lee, Kyoungjun
    Lim, Hong Heon
    Song, Myeong Seop
    Yang, Sang Mo
    Yoo, Hyang Keun
    Suh, Dong Ik
    Zhu, Zhongwei
    Yoon, Alexander
    MacDonald, Matthew R.
    Lei, Xinjian
    Jeong, Hu Young
    Lee, Donghoon
    Park, Kunwoo
    Park, Jungwon
    Chae, Seung Chul
    ACS APPLIED MATERIALS & INTERFACES, 2019, 11 (03) : 3142 - 3149
  • [5] On the Origin of Wake-Up and Antiferroelectric-Like Behavior in Ferroelectric Hafnium Oxide
    Lederer, Maximilian
    Olivo, Ricardo
    Lehninger, David
    Abdulazhanov, Sukhrob
    Kaempfe, Thomas
    Kirbach, Sven
    Mart, Clemens
    Seidel, Konrad
    Eng, Lukas M.
    PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS, 2021, 15 (05):
  • [6] Evidence for oxygen vacancies movement during wake-up in ferroelectric hafnium oxide
    Starschich, S.
    Menzel, S.
    Boettger, U.
    APPLIED PHYSICS LETTERS, 2016, 108 (03)
  • [7] The effects of layering in ferroelectric Si-doped HfO2 thin films
    Lomenzo, Patrick D.
    Takmeel, Qanit
    Zhou, Chuanzhen
    Liu, Yang
    Fancher, Chris M.
    Jones, Jacob L.
    Moghaddam, Saeed
    Nishida, Toshikazu
    APPLIED PHYSICS LETTERS, 2014, 105 (07)
  • [8] Huge Reduction of the Wake-Up Effect in Ferroelectric HZO Thin Films
    Bouaziz, Jordan
    Romeo, Pedro Rojo
    Baboux, Nicolas
    Vilquin, Bertrand
    ACS APPLIED ELECTRONIC MATERIALS, 2019, 1 (09) : 1740 - 1745
  • [9] Influence of Annealing Temperature on the Structural and Electrical Properties of Si-Doped Ferroelectric Hafnium Oxide
    Lederer, Maximilian
    Bagul, Pratik
    Lehninger, David
    Mertens, Konstantin
    Reck, Andre
    Olivo, Ricardo
    Kampfe, Thomas
    Seidel, Konrad
    Eng, Lukas M.
    ACS APPLIED ELECTRONIC MATERIALS, 2021, 3 (09) : 4115 - 4120
  • [10] Pyroelectric and electrocaloric effects in ferroelectric silicon-doped hafnium oxide thin films
    Pandya, Shishir
    Velarde, Gabriel
    Zhang, Lei
    Martin, Lane W.
    PHYSICAL REVIEW MATERIALS, 2018, 2 (12):
12345