Origin of type-C defects on the Si(100)-(2x1) surface -: art. no. 161302

被引：35
|
作者：
Nishizawa, M
Yasuda, T
Yamasaki, S
Miki, K
Shinohara, M
Kamakura, N
Kimura, Y
Niwano, M
机构：
[1] Natl Inst Adv Ind Sci & Technol, Tsukuba, Ibaraki 3058561, Japan
[2] JRCAT, Tsukuba, Ibaraki 3058562, Japan
[3] ASRC, Tsukuba, Ibaraki 3058562, Japan
[4] Nanotechnol Inst, Tsukuba, Ibaraki 3058568, Japan
[5] Tohoku Univ, Elect Commun Res Inst, Sendai, Miyagi 9808577, Japan
来源：
PHYSICAL REVIEW B | 2002年 / 65卷 / 16期
关键词：
D O I：
10.1103/PhysRevB.65.161302
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The generation processes of type-C defects on the Si(100)-(2x1) surface have been systematically investigated by using scanning tunneling microscopy and infrared absorption spectroscopy. We show that the type-C defect is extrinsic, being caused by bimolecular dissociative adsorption of H2O in the ultrahigh vacuum environment. A structural model of the type-C defect is proposed.
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页数：4
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